2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 60 — V Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 40 — V Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6— V Collector ... Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS ...
2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 4 Discrete POWER & Signal N Technologies 2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch.
Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values
Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 4 1 Publication Order Number: 2N3903/D 2N3903, 2N3904 2N3903 is a Preferred Device 2N3906 datasheet, 2N3906 datasheets, 2N3906 pdf, 2N3906 circuit : ONSEMI - General Purpose Transistors(PNP Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N3904 Datasheet : NPN General Purpose Amplifier, 2N3904 PDF Download Philips Electronics, 2N3904 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits Electronic component search and free download site.
Nov 21, 2015 · I've been playing with electronics for 40 years, but there's still stuff to learn - even basic stuff about how transistors work. Here I measure the Collector/Emitter junction voltage when the ... 2n3904 small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is – Information on datasheets The Transistor (NPN) • A current amplifier … – Makes small currents BIGGER • The 2N3904 Transistor β = 30-400 C= Collector B = Base E = Emitter Important 2N3904 Specifications from the datasheet Note high maximum ratings BUT 200mA maximum current 2N3904 Datasheet • Posted on the ME456 website 2N3904 Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 2N3904 Bipolar Transistors - BJT. Kynix will provide you the global and original Reed Relays's Stock Information, Reference Price, Package Lot No., etc, Free PDF Datasheet Download. You will view the photos of products from stock suppliers.
2004 Oct 11 6 Philips Semiconductors Product speciﬁcation NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. Compare pricing for NXP Semiconductors 2N3904 across 7 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. Jan 26, 2015 · This feature is not available right now. Please try again later.
Schneider Electric/Legacy Relays W117SIP-18 ... Datasheet. View More from Schneider Electric/Legacy Relays >> ... $6.700 Each. Quantity added: People Also Bought ... 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 60 — V Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 40 — V Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6— V Collector ... Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes.